FDN306P
Manufacturer:
On Semiconductor
Mfr.Part #:
FDN306P
Datasheet:
Description:
MOSFETs SuperSOT-3 SMD/SMT P-Channel number of channels:1 500 mW -12 V Continuous Drain Current (ID):2.6 A 17 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -12 V |
| Length | 2.92 mm |
| Width | 1.4 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 40 mΩ |
| Height | 940 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Voltage | 12 V |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current | 26 A |
| Current Rating | -2.6 A |
| Max Power Dissipation | 500 mW |
| Power Dissipation | 500 mW |
| Threshold Voltage | -600 mV |
| Number of Channels | 1 |
| Input capacitance | 1.138 nF |
| Continuous Drain Current (ID) | 2.6 A |
| Rds On Max | 40 mΩ |
| Drain to Source Voltage (Vdss) | 12 V |
| Turn-On Delay Time | 11 ns |
| Turn-Off Delay Time | 38 ns |
| Element Configuration | Single |
| Fall Time | 10 ns |
| Rise Time | 10 ns |
| Dual Supply Voltage | -12 V |
| Gate Charge | 17 nC |
| Drain to Source Resistance | 40 mΩ |
| Nominal Vgs | -600 mV |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | -12 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 1.5 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 2166
Distributors
pcbx
pcbxUnit Price$0.24883
Ext.Price$0.24883
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.24883 | $0.24883 |
| 10 | $0.22536 | $2.25360 |
| 50 | $0.20410 | $10.20500 |
| 100 | $0.18216 | $18.21600 |
| 500 | $0.16257 | $81.28500 |
| 1000 | $0.15397 | $153.97000 |
| 3000 | $0.14582 | $437.46000 |
| 5000 | $0.13926 | $696.30000 |